FDS8333C

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Gate-Source Breakdown Voltage : +/- 16 V, +/- 20 V
Continuous Drain Current : 4.1 A, - 3.4 A


Features:

`  Q1 4.1 A, 30V.     R<sub>DS(ON)</sub> = 80 mW    @  V<sub>GS</sub> = 10 V
                                R<sub>DS(ON)</sub> = 130 mW  @   V<sub>GS</sub> = 4.5 V
`  Q2 3.4 A, 30V.  R_DS(ON) = 130 mW  @  V_GS = 10 V
                                 R_DS(ON) = 200 mW @  V_GS = 4.5 V
`  Low gate charge
`  High performance trench technology for extremely low R_DS(ON).
`  High power and handling capability in a widely used surface mount package.


Pinout




Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	30	30	V
VGSS	Gate-Source Voltage	±16	±20
ID	Drain Current Continuous (Note 1a)                        Pulsed	4.1	3.4	A
		20	20
PD	Power Dissipation for Dual Operation	2		W
	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	1.6
		1
		0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150		°C

Description

These FDS8333C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS8333C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.


Parameters:

Technical/Catalog Information	FDS8333C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.1A, 3.4A
Rds On (Max) @ Id, Vgs	80 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds	282pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.6nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8333C FDS8333C