FDS8433A

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V
                     RDS(on)= 0.070 Ω @ VGS = -2.5 V
• Fast switching speed.
•  High density cell design for extremely low RDS(on)
• High power and current handling capability.


Application

• Load switch
• DC/DC converter
• Battery protection


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-5	A
		-50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS8433A P-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS  technology. This very high density  processis especially tailored to  minimize on-state resistance and  provide superior switching performance.

Parameters:

Technical/Catalog Information	FDS8433A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	47 mOhm @ 5A, 4.5V
Input Capacitance (Ciss) @ Vds	1130pF @ 10V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	28nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8433A FDS8433A FDS8433ADKR ND FDS8433ADKRND FDS8433ADKR