FDS9926A

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 30 m Ohms


Features:

• 6.5 A, 20 V. R_DS(ON) = 0.030 @ V_GS = 4.5 V
                     R_DS(ON) = 0.043 @ V_GS = 2.5 V.
• Optimized for use in battery protection circuits
• ±10 VGSS allows for wide operating voltage range
• Low gate charge


Application

• Battery protection
• Load switch
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		20	V
VGSS	Gate-Source Voltage		±10
ID	Drain Current	Continuous (Note 1a) Pulsed	6.5	A
			20
PD	Power Dissipation for Dual Operation		2	W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150	°C

Description

These FDS9926A N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 10V).

Parameters:

Technical/Catalog Information	FDS9926A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	30 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds	650pF @ 10V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9nC @ 4.5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS9926A FDS9926A FDS9926ATR ND FDS9926ATRND FDS9926ATR