FDT461N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 1.4 Ohms
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 0.4 A


Features:

• r_DS(ON) = 1.45Ω (Typ.), V_GS = 4.5V, I_D = 0.4A
• Q_g(tot) = 2.36nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode


Application

• Servo Motor Load Control
• DC-DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	100	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA= 110°C/W)	0.54	A
	Continuous (TA = 25oC, VGS = 4.5V, RJA= 110°C/W)	0.4	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	6.3	mJ
PD	Power Dissipation Derate above 25 °C	1.13	W mW/°C
		9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Parameters:

Technical/Catalog Information	FDT461N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	540mA
Rds On (Max) @ Id, Vgs	2 Ohm @ 540mA, 10V
Input Capacitance (Ciss) @ Vds	74pF @ 25V
Power - Max	1.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDT461N FDT461N