Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Package / Case
: SOT-23
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Gate-Source Breakdown Voltage
: +/- 12 V
Continuous Drain Current
: 0.9 A
Resistance Drain-Source RDS (on)
: 0.164 Ohms
Features: * 0.9 A, 20 V RDS(ON) = 220 m @ VGS = 4.5 V RDS(ON) = 300 m @ VGS = 2.5 V
* Low gate charge
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
Application* Load switch
* Battery protection
* Power management Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
20 |
V |
|
VGSS |
Gate-Source Voltage |
±12 |
V |
|
ID |
Drain Current Continuous
Pulsed |
0.9 |
A |
|
2 |
|
PD |
Maximum Power Dissipation |
0.35 |
W |
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
DescriptionThis FDV305N 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.
Parameters: | Technical/Catalog Information | FDV305N |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 900mA |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 900mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 109pF @ 10V |
| Power - Max | 350mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 4.5V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDV305N
FDV305N
FDV305NTR ND
FDV305NTRND
FDV305NTR
|
FDV305N Data Sheet
