FDW2507N

MOSFET N-Channel 2.5V Common Drain

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SeekIC No. : 00163476 Detail

FDW2507N: MOSFET N-Channel 2.5V Common Drain

floor Price/Ceiling Price

Part Number:
FDW2507N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 19 m Ohms Configuration : Dual Common Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSSOP-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Configuration : Dual Common Quad Drain
Resistance Drain-Source RDS (on) : 19 m Ohms


Features:

7.5 A, 20 V.  RDS(ON) = 19 m @ VGS= 4.5 V
                       RDS(ON)  = 23 m @ VGS= 2.5 V
Isolated source and drain pins
High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V
Low profile TSSOP-8 package




Application

Li-Ion Battery Pack 


Pinout

  Connection Diagram


Specifications

Symbol Parameter FDV302P Units
VDSS
Drain-Source Voltage 20  V
VGSS Gate-Source Voltage ±12 V
ID
Drain Current Continuous (Note 1a) Pulsed 7.5 A
30
PD Power Dissipation for Single Operation (Note 1a) (Note 1b) 1.6 W
1.1
TJ,TSTG
Operating and Storage Temperature Range 55 to +150 °C



Description

This monolithic common drain N-Channel MOSFET FDW2507N has been designed using Fairchild Semiconductor's advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.


Parameters:

Technical/Catalog InformationFDW2507N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C7.5A
Rds On (Max) @ Id, Vgs19 mOhm @ 7.5A, 4.5V
Input Capacitance (Ciss) @ Vds 2152pF @ 10V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDW2507N
FDW2507N



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