FDW2510NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Continuous Drain Current : 6.4 A
Resistance Drain-Source RDS (on) : 18 m Ohms
Configuration : Dual Dual Source


Features:

6.4 A, 20 V    RDS(ON)  = 24 mW @ VGS = 4.5 V

                        RDS(ON)  = 32 mW @ VGS = 2.5 V

Extended V_GSS range (±12V) for battery applications 

ESD protection diode (note 3) 

High performance trench technology for extremely low RDS(ON) 

Low profile TSSOP-8 package

Application

Li-Ion Battery Pack


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	6.4	A
		30
PD	Power Dissipation (Note 1a) (Note 1b)	1.6	W
		1.1
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDW2510NZ N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process.  It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Parameters:

Technical/Catalog Information	FDW2510NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.4A
Rds On (Max) @ Id, Vgs	24 mOhm @ 6.4A, 4.5V
Input Capacitance (Ciss) @ Vds	870pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2510NZ FDW2510NZ