MOSFET 2.5V DUAL NCH SPEC PWR TRCH
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 6.4 A | ||
Resistance Drain-Source RDS (on) : | 18 m Ohms | Configuration : | Dual Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSSOP-8 | Packaging : | Reel |
6.4 A, 20 V RDS(ON) = 24 mW @ VGS = 4.5 V
RDS(ON) = 32 mW @ VGS = 2.5 V
Extended VGSS range (±12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current - Continuous (Note 1a) |
6.4 |
A |
30 | |||
PD |
Power Dissipation (Note 1a) |
1.6 |
W |
1.1 | |||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
This FDW2510NZ N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Technical/Catalog Information | FDW2510NZ |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6.4A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 6.4A, 4.5V |
Input Capacitance (Ciss) @ Vds | 870pF @ 10V |
Power - Max | 1.1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
Package / Case | 8-TSSOP |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDW2510NZ FDW2510NZ |