FDW2510NZ

MOSFET 2.5V DUAL NCH SPEC PWR TRCH

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FDW2510NZ: MOSFET 2.5V DUAL NCH SPEC PWR TRCH

floor Price/Ceiling Price

US $ .23~.43 / Piece | Get Latest Price
Part Number:
FDW2510NZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Unit Price
  • $.43
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 6.4 A
Resistance Drain-Source RDS (on) : 18 m Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSSOP-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Continuous Drain Current : 6.4 A
Resistance Drain-Source RDS (on) : 18 m Ohms
Configuration : Dual Dual Source


Features:

6.4 A, 20 V    RDS(ON)  = 24 mW @ VGS = 4.5 V

                        RDS(ON)  = 32 mW @ VGS = 2.5 V

Extended VGSS range (±12V) for battery applications 

ESD protection diode (note 3) 

High performance trench technology for extremely low RDS(ON) 

Low profile TSSOP-8 package




Application

Li-Ion Battery Pack


Specifications

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID

Drain Current - Continuous (Note 1a)
- Pulsed

6.4

A

30

PD

Power Dissipation (Note 1a)
(Note 1b)

1.6

W

1.1

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C




Description

This FDW2510NZ N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process.  It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).




Parameters:

Technical/Catalog InformationFDW2510NZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.4A
Rds On (Max) @ Id, Vgs24 mOhm @ 6.4A, 4.5V
Input Capacitance (Ciss) @ Vds 870pF @ 10V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDW2510NZ
FDW2510NZ



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