FDW2511NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Continuous Drain Current : 7.1 A
Resistance Drain-Source RDS (on) : 0.02 Ohms
Configuration : Dual Common Dual Drain Dual Source


Features:

7.1A, 20V    r_DS(ON)  =0.020  V_GS  = 4.5V
                      r_DS(ON)  =0.025  V_GS = 2.5V
Extended   V_GS range ( ±12 V) for battery applications
HBM ESD Protection Level of 3.5kV Typical (note 3)
High performance trench technology for extremely low r_DS(ON)
Low profile TSSOP-8 package


Application

Load switch
Battery charge
Battery disconnect circuits


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	20	V
VGS	Gate to Source Voltage	±12	V
ID	Drain Current Continuous (TC = 25 C, VGS = 4.5V, RJA = 77 C/W)	7.1	A
	Continuous (TC = 100 C, VGS = 2.5V, RJA = 77 C/W)	4.0	A
	Pulsed	Figure 4	A
PD	Power dissipation	1.6	W
	Derate above 25°C	13	mW/
TJ , TSTG	Operating and Storage Temperature	-55 to 150

Description

This N-Channel MOSFET FDW2511NZ is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics  applications.


Parameters:

Technical/Catalog Information	FDW2511NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.1A
Rds On (Max) @ Id, Vgs	20 mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) @ Vds	1000pF @ 10V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17.3nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2511NZ FDW2511NZ