FDW2512NZ

MOSFET 2.5V TSSOP8 DUAL NCH SPECIFIED TRENCH

product image

FDW2512NZ Picture
SeekIC No. : 00151817 Detail

FDW2512NZ: MOSFET 2.5V TSSOP8 DUAL NCH SPECIFIED TRENCH

floor Price/Ceiling Price

US $ .35~.74 / Piece | Get Latest Price
Part Number:
FDW2512NZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.74
  • $.64
  • $.48
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSSOP-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : TSSOP-8
Configuration : Dual Dual Source


Features:

6A, 20V  rDS(ON)  = 0.028 VGS  = 4.5V
                 rDS(ON)  = 0.036 VGS  = 2.5V
Extended VGS range ( ±12 V) for battery applications
HBM ESD Protection Level of 3.5kV Typical (note 3)
High performance trench technology for extremely low rDS(ON)
Low profile TSSOP-8 package



Application

Load switch
Battery charge
Battery disconnect circuits



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 20 V
VGS Gate to Source Voltage ±12
V
ID Drain Current
Continuous (TC = 25, VGS = 4.5V, RJA = 77 /W)
6.0 A
Continuous (TC = 100 , VGS = 2.5V, RJA = 77 /W) 3.3 A
Pulsed Figure 4 A
PD Power dissipation 1.6 W
Derate above 25°C 13 mW/
TJ , TSTG
Operating and Storage Temperature -55 to 150



Description

This N-Channel MOSFET FDW2512NZ is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics  applications.


Parameters:

Technical/Catalog InformationFDW2512NZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs28 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 670pF @ 10V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDW2512NZ
FDW2512NZ



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Cables, Wires - Management
Cable Assemblies
Programmers, Development Systems
Optical Inspection Equipment
Crystals and Oscillators
View more