FDW2515NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5.8 A
Package / Case : TSSOP-8
Resistance Drain-Source RDS (on) : 22 m Ohms
Configuration : Dual Common Dual Drain Dual Source


Features:

5.8 A, 20 V  R_DS(ON)  = 28 m@ V_GS = 4.5 V 
                      R_DS(ON)  = 38 m@ V_GS = 2.5 V
Extended VGSS range (±12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely low R_DS(ON) @ V_GS = 2.5 V
Low profile TSSOP-8 package


Application

Li-Ion Battery Pack 


Pinout




Specifications

Symbol	Parameter	FDV302P	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	5.8	A
		20
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.6	W
		1.1
TJ,TSTG	Operating and Storage Temperature Range	55 to +150	°C

Description

This N-Channel 2.5V specified MOSFET FDW2515NZ is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).