FDW2516NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 30 mOhms at 4.5 V
Package / Case : TSSOP-8
Configuration : Dual Common Quad Drain


Features:

5.8 A, 20 V R_DS(ON) = 30 m@ V_GS = 4.5 V

                     R_DS(ON) = 40 m@ V_GS = 2.5 V 

Isolated source and drain pins 

ESD protection diode (note 3) 

High performance trench technology for extremely

low R_DS(ON) @ V_GS = 2.5 V 

Low profile TSSOP-8 package

Application

Li-Ion Battery Pack


Pinout




Specifications

Symbol	Parameter	FDV302P	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	5.8	A
		20
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.6	W
		1.1
TJ,TSTG	Operating and Storage Temperature Range	55 to +150	°C

Description

This dual N-Channel MOSFET FDW2516NZ has been designed using Fairchild Semiconductor's advanced PowerTrench process to optimize the R_DS(ON) @ V_GS =2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.


Parameters:

Technical/Catalog Information	FDW2516NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	30 mOhm @ 5.8A, 4.5V
Input Capacitance (Ciss) @ Vds	745pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2516NZ FDW2516NZ