FDW2520C

MOSFET PowerTrench

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FDW2520C Picture
SeekIC No. : 00159912 Detail

FDW2520C: MOSFET PowerTrench

floor Price/Ceiling Price

Part Number:
FDW2520C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/1

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : + 6 A, - 4.4 A
Resistance Drain-Source RDS (on) : 18 m Ohms / 35 m Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSSOP-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : TSSOP-8
Configuration : Dual Dual Source
Continuous Drain Current : + 6 A, - 4.4 A
Resistance Drain-Source RDS (on) : 18 m Ohms / 35 m Ohms


Features:

Q1:   N-Channel
             6 A, 20 V. R DS(ON) = 18 m@ VGS = 4.5 V
                             R DS(ON) = 28 m@ VGS = 2.5 V
Q2:   P-Channel     
   4.4A, 20 V.      RDS(ON) = 35 m@ VGS = 4.5 V
                             RDS(ON) = 57 m@ VGS = 2.5 V
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package



Application

DC/DC conversion
Power management
Load switch



Pinout

  Connection Diagram


Specifications

Symbol Parameter Q1 Q2 Units
VDSS Drain-Source Voltage 20 20 V
VGSS Gate-Source Voltage ±12 ±12 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
6 4.4 A
30 30
PD Power Dissipation (Note 1a)
(Note 1b)
1.0 W
0.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This complementary MOSFET device FDW2520C is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.


Parameters:

Technical/Catalog InformationFDW2520C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.4A
Rds On (Max) @ Id, Vgs18 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 1325pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs20nC @ 4.5V
Package / Case8-TSSOP
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDW2520C
FDW2520C
FDW2520CCT ND
FDW2520CCTND
FDW2520CCT



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