MOSFET PowerTrench
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | + 6 A, - 4.4 A | ||
Resistance Drain-Source RDS (on) : | 18 m Ohms / 35 m Ohms | Configuration : | Dual Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSSOP-8 | Packaging : | Reel |
Symbol | Parameter | Q1 | Q2 | Units |
VDSS | Drain-Source Voltage | 20 | 20 | V |
VGSS | Gate-Source Voltage | ±12 | ±12 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
6 | 4.4 | A |
30 | 30 | |||
PD | Power Dissipation (Note 1a) (Note 1b) |
1.0 | W | |
0.6 | ||||
TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
Technical/Catalog Information | FDW2520C |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 4.4A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 6A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1325pF @ 10V |
Power - Max | 1W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
Package / Case | 8-TSSOP |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDW2520C FDW2520C FDW2520CCT ND FDW2520CCTND FDW2520CCT |