FDW2520C

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : TSSOP-8
Configuration : Dual Dual Source
Continuous Drain Current : + 6 A, - 4.4 A
Resistance Drain-Source RDS (on) : 18 m Ohms / 35 m Ohms


Features:

Q1:   N-Channel
             6 A, 20 V. R _DS(ON) = 18 m@ V_GS = 4.5 V
                             R _DS(ON) = 28 m@ V_GS = 2.5 V
Q2:   P-Channel     
   4.4A, 20 V.      R_DS(ON) = 35 m@ V_GS = 4.5 V
                             R_DS(ON) = 57 m@ V_GS = 2.5 V
High performance trench technology for extremely low R_DS(ON)
Low profile TSSOP-8 package


Application

DC/DC conversion
Power management
Load switch


Pinout




Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	20	20	V
VGSS	Gate-Source Voltage	±12	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	6	4.4	A
		30	30
PD	Power Dissipation (Note 1a) (Note 1b)	1.0		W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150		°C

Description

This complementary MOSFET device FDW2520C is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.


Parameters:

Technical/Catalog Information	FDW2520C
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.4A
Rds On (Max) @ Id, Vgs	18 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds	1325pF @ 10V
Power - Max	1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2520C FDW2520C FDW2520CCT ND FDW2520CCTND FDW2520CCT