Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: - 30 V
Continuous Drain Current
: 8 A
Gate-Source Breakdown Voltage
: +/- 25 V
Package / Case
: TSSOP-8
Configuration
: Single Triple Drain Quad Source
Resistance Drain-Source RDS (on)
: 13.5 m Ohms
Features: 8 A, 30 V
RDS(ON) = 13.5 m@VGS = 10 V
RDS(ON) = 20 m@VGS = 4.5 V
Extended VGSS range (±25V) for battery applications
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
ApplicationBattery protection
DC/DC conversion
Power management
Load switch
Pinout
Specifications
| Symbol |
Parameter |
FDV302P |
Units |
VDSS
|
Drain-Source Voltage |
30 |
V |
| VGSS |
Gate-Source Voltage |
±25 |
V |
ID
|
Drain Current Continuous (Note 1a) Pulsed |
8 |
A |
| 50 |
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) |
1.3 |
W |
| 0.6 |
TJ,TSTG
|
Operating and Storage Temperature Range |
55 to +150 |
°C |
DescriptionThis FDW256P P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
Parameters: | Technical/Catalog Information | FDW256P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 2267pF @ 15V |
| Power - Max | 600mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 38nC @ 5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDW256P
FDW256P
|
FDW256P Data Sheet
