Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 8 V
Continuous Drain Current
: 4.5 A
Package / Case
: TSSOP-8
Configuration
: Single Triple Drain Quad Source
Resistance Drain-Source RDS (on)
: 47 m Ohms
Features: 4.5 A, 20 V.
R DS(ON) = 47 m @ VGS = 4.5 V
RDS(ON) = 65 m @ VGS = 2.5 V
RDS(ON) = 100 m@ VGS = 1.8 V
RDS(ON) rated for use with 1.8 V logic
Low gate charge (13nC typical)
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
ApplicationPower management
Load switch Pinout
Specifications
| Symbol |
Parameter |
FDV302P |
Units |
VDSS
|
Drain-Source Voltage |
20 |
V |
| VGSS |
Gate-Source Voltage |
±8 |
V |
ID
|
Drain Current Continuous (Note 1a) Pulsed |
4.5 |
A |
| 40 |
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) |
1.3 |
W |
| 0.6 |
TJ,TSTG
|
Operating and Storage Temperature Range |
55 to +150 |
°C |
DescriptionThis FDW262P P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Parameters: | Technical/Catalog Information | FDW262P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 4.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1193pF @ 10V |
| Power - Max | 600mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 18nC @ 4.5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDW262P
FDW262P
|
FDW262P Data Sheet
