Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Gate-Source Breakdown Voltage
: +/- 12 V
Continuous Drain Current
: 4.5 A
Package / Case
: TSSOP-8
Resistance Drain-Source RDS (on)
: 27 m Ohms
Configuration
: Dual Common Dual Drain Dual Source
Features:
4.5 A, 20 V. RDS(ON) = 32 m @ VGS = 4.5 V
RDS(ON) = 45 m@ VGS = 2.5 V
ESD protection diode (note 3)
High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V
Low profile TSSOP-8 package
ApplicationBattery protection
Load switch
Power management
Pinout
Specifications
| Symbol |
Parameter |
FDV302P |
Units |
VDSS
|
Drain-Source Voltage |
20 |
V |
| VGSS |
Gate-Source Voltage |
±12 |
V |
ID
|
Drain Current Continuous (Note 1a) Pulsed |
4.5 |
A |
| 30 |
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) |
1.6 |
W |
| 1.1 |
TJ,TSTG
|
Operating and Storage Temperature Range |
55 to +150 |
°C |
DescriptionThis N-Channel 2.5V specified MOSFET FDW9926NZ is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. FDW9926NZ has been optimized for power management applications with a wide range of gate drive voltage (2.5V 10V).
Parameters: | Technical/Catalog Information | FDW9926NZ |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 4.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 600pF @ 10V |
| Power - Max | 1.1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 8nC @ 4.5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDW9926NZ
FDW9926NZ
|
FDW9926NZ Data Sheet
