FDZ203N

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.014 Ohms
Package / Case : BGA


Features:

*  7.5 A, 20 V.  R_DS(ON) = 18 m @ VGS = 4.5  R_DS(ON) = 30 m @ V_GS = 2.5 V

*  Occupies only 4 mm²  of PCB area. Less than 40% of the area of a SSOT-6
*  Ultra-thin package:  less than 0.80 mm height when mounted to PCB
*  Ultra-low Q_g x R_DS(ON) figure-of-merit.
*  High power and current handling capability.


Application

*  Battery management 
*  Load switch
*  Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	7.5	A
		20
PD	Power Dissipation (Steady State) (Note 1a)	1.6	W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

Combining  Fairchild's  advanced  2.5V  specified PowerTrench  process  with  state  of  the  art  BGA packaging, the FDZ203N minimizes both PCB space and  RDS(ON).    This  BGA  OSFET  embodies  a breakthrough in packaging technology  which enables the  device  to  combine  excellent  thermal  transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).  

Parameters:

Technical/Catalog Information	FDZ203N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	18 mOhm @ 7.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1127pF @ 10V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ203N FDZ203N