IGBT Transistors 330V 180A PDP Trench
FGA180N33ATTU: IGBT Transistors 330V 180A PDP Trench
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 330 V | ||
| Maximum Gate Emitter Voltage : | +/- 30 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-3PN-3 | Packaging : | Tube |
| Technical/Catalog Information | FGA180N33ATTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 330V |
| Current - Collector (Ic) (Max) | 180A |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 40A |
| Power - Max | 390W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGA180N33ATTU FGA180N33ATTU |