IGBT Transistors 600V/5A Field Stop Low Vcesat
FGP5N60LS: IGBT Transistors 600V/5A Field Stop Low Vcesat
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| Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 1.8 V |
| Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 10 A |
| Gate-Emitter Leakage Current : | 400 nA | Power Dissipation : | 83 W |
| Maximum Operating Temperature : | + 125 C | Package / Case : | TO-220 |
| Packaging : | Tube |