IGBT Transistors 11.5 Amps 1700V 5.2 Rds
FII24N17AH1: IGBT Transistors 11.5 Amps 1700V 5.2 Rds
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Configuration : | Dual | Collector- Emitter Voltage VCEO Max : | 1700 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | ISOPLUS i4-PAC-5 | Packaging : | Box |
Technical/Catalog Information | FII24N17AH1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Configuration | Half Bridge |
Input | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 18A |
Power - Max | 140W |
Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 16A |
Current - Collector Cutoff (Max) | 100A |
NTC Thermistor | No |
Input Capacitance (Cies) @ Vce | * |
Mounting Type | Through Hole |
Package / Case | ISOPLUS i4-PAC? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FII24N17AH1 FII24N17AH1 |