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FJB102

Features: • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)• Low Collector-Emitter Saturation Voltage• High Collector-Emitter Sustaining Voltage• Monolithic Construction with Built-in Base-Emitter Shunt Resistors• Industrial UseSpecifications Symbol Param...

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SeekIC No. : 004341691 Detail

FJB102: Features: • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)• Low Collector-Emitter Saturation Voltage• High Collector-Emitter Sustaining Voltage• Monolithic Constructi...

FJB102 Data Sheet

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Part Number:
FJB102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Low Collector-Emitter Saturation Voltage
• High Collector-Emitter Sustaining Voltage
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• Industrial Use


Specifications

Symbol Parameter

          Value

 Unit
VCBO

Collector-Base Voltage

 100 V
VCEO

Collector-Emitter Voltage

 100 V
VEBO

Emitter-Base Voltage

 5 V
IC

Collector Current (DC)

 8 A
ICP Collector Current (Pulse)

 15

 A

IB Base Current (DC)

 1

 A

PC

Collector Dissipation (TC=25°C)

 80 W
TJ Junction Temperature

 150

 

TSTG

Storage Temperature

- 65 ~ 150

* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed


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