FLM8596-15F

Features: ・High Output Power: P1dB=42.0dBm(Typ.)・High Gain: G1dB=7.5dB(Typ.)・High PAE: add=32%(Typ.)・Broad Band: 8.5~9.6GHz・Impedance Matched Zin/Zout = 50・Hermetically Sealed PackageSpecifications Item Symbol Rating Unit Drain-Source Voltage V...

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FLM8596-15F Picture
SeekIC No. : 004342108 Detail

FLM8596-15F: Features: ・High Output Power: P1dB=42.0dBm(Typ.)・High Gain: G1dB=7.5dB(Typ.)・High PAE: add=32%(Typ.)・Broad Band: 8.5~9.6GHz・Impedance Matched Zin/Zout = 50・...

floor Price/Ceiling Price

Part Number:
FLM8596-15F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.5dB(Typ.)
・High PAE: add=32%(Typ.)
・Broad Band: 8.5~9.6GHz
・Impedance Matched Zin/Zout = 50
・Hermetically Sealed Package



Specifications

Item Symbol Rating Unit
Drain-Source Voltage VDS 15 V
Gate-Source Voltage VGS -5 V
Total Power Dissipation PT 57.7 W
Storage Temperature Tstg -65 to +175 °C
Channel Temperature Tch +175 °C



Description

The FLM8596-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system.


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