FM24C256-G/TR

The FM24C256-G/TR is a type of 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. When eliminating the complexities, overhead, andsystem level reliability problems caused by EEPROM and other nonvolatile memories, FM24C256-G/TR offers reliable data retention for 45 years.

Features of the FM24C256-G/TR are:(1)256Kbit ferroelectric nonvolatile RAM:organized as 32,768 x 8 bits,high endur ance 10 billion (1010) read/writes,45 year data retention,nodelaywrites:advanced high-reliability ferroelectric proces s;(2)fast two-wire serial interface:up to 1 mhz maximum bus frequencysupports legacy timing for 100 kHz & 400 kHz;(3)low power operation:5V Operation,200uA active current (100 kHz),100uA standby current;(4)industry standard co nfiguration:industrial temperature -40C to +85C,8-pin EIAJ SOIC,"green"packaging option.

The absolute maximum ratings of the FM24C256-G/TR can be summarized as:(1):voltage on VDD with respect to VSS is-1.0V to +7.0V;(2):voltage on any signal pin with respect to VSS is-1.0V to +7.0V and VIN < VDD+1.0V ;(3):storage temperature is-55°C to + 125°C;(4):lead temperature (soldering, 10 seconds) is 300° C; (5):package moisture se nsitivity level is MSL-1;(6):electrostatic discharge voltage: human body model (JEDEC Std JESD22-A114-B) is 4KV,mac hine model (JEDEC Std JESD22-A115-A) is 400V.