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FP102

Features: · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.· The FP102 is formed with 2chips, one being equivalent to the 2SB1396 and the other the SB07-03C, placed in one package.PinoutSpecifications Absol...

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SeekIC No. : 004342942 Detail

FP102: Features: · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.· The FP102 is formed with 2chips, one being equivalent to t...

FP102 Data Sheet

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Part Number:
FP102
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.
· The FP102 is formed with 2chips, one being equivalent to the 2SB1396 and the other the SB07-03C, placed in one package.




Pinout

Connection Diagram




Specifications

Absolute maximum ratings
VCEO [V] 11
IC [A] 3
PC [W] 1.3
When mounted on ceramic substrate (250mm²×0.8mm) 1unit
VRRM [V] 30
IO [A] 0.7
Electrical characteristics
hFE min 140
hFE max 560
VCE [V] 2
IC [A] 0.5
VCE (sat) typ [V] 0.22
VCE (sat) max [V] 0.4
IC [A] 1.5
IB [mA] 30
VF max [V] 0.55
IF [A] 0.7
IR max [mA] 0.08
VR [V] 15
trr max *typ [nS] 10
IF [A] 0.1


Parameter
Symbo
Conditions
Ratings
 Unit
[TR]
Collector-to-Base Voltage
VCBO
-15
 V
Collector-to-Emitter Votage
VCEO
-11
 V
Emitter-to-Base Voltage
VEBO
-7
 V
collector current
IC
-3
 A
Collector Current(Pulse)
ICP
-5
 A
Base current
IB
-600
 mA
Collector Dissipation
PC
Mounted on ceramic board 250mm2´0.8mm)
1.3
 W
Junction Temperature
TJ
150
 °C
[SBD]
Repetitive Peak Reverse Volatage
VRRM
30
 V
Non-repetitive Peak Reverse Surge Voltage
VRSM
35
 V
Average-rectified Current
IO
700
 Am
Surge Forward Current
IFSM
50HZ sine wav,1cycle
5
 A
Junction Temperature
Tj
-55to+125
 °C
Storage Temperature
Tstg
-55to+125
 °C





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