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FP107

Features: · Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating ighdensitymounting.· The FP107 is composed of 2 chips, one being equivalent to the 2SB1396 and the other the SBS001.PinoutSpecifications Parameter Symbo Conditions Ratings Uni...

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SeekIC No. : 004342947 Detail

FP107: Features: · Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating ighdensitymounting.· The FP107 is composed of 2 chips, one being equivalent to the 2SB1396 a...

FP107 Data Sheet

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Part Number:
FP107
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating ighdensitymounting.
· The FP107 is composed of 2 chips, one being equivalent to the 2SB1396 and the other the SBS001.




Pinout

Connection Diagram




Specifications

Parameter
Symbo
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
-15
V
Collector-to-Emitter Votage
VCEO
-11
V
Emitter-to-Base Voltage
VEBO
-7
V
collector current
IC
-3
A
Collector Current(Pulse)
ICP
-5
A
Base current
IB
-600
mA
Collector Dissipation
PC
Mounted on ceramic board 250mm2´0.8mm)
1.3
W
Junction Temperature
TJ
150
°C
[SBD]
Repetitive Peak Reverse Volatage
VRRM
11
V
Non-repetitive Peak Reverse Surge Voltage
VRSM
15
V
Average-rectified Current
IO
500
Am
Surge Forward Current
IFSM
50HZ sine wav,1cycle
5
A
Junction Temperature
Tj
-55to+125
°C
Storage Temperature
Tstg
-55to+125
°C


Absolute maximum ratings
VCEO [V] 11
IC [A] 3
PC [W] 1.3
When mounted on ceramic substrate (250mm²×0.8mm) 1unit
VRRM [V] 11
IO [A] 0.5
Electrical characteristics
hFE min 140
hFE max 560
VCE [V] 2
IC [A] 0.5
VCE (sat) typ [V] 0.22
VCE (sat) max [V] 0.4
IC [A] 1.5
IB [mA] 30
VF max [V] 0.45
IF [A] 0.5
IR max [mA] 0.02
VR [V] 6
trr max *typ [nS] 50*
IF [A] 0.1





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