Features: • Up to 0.7 A current drive available• On-chip bias resistor• Low power consumption during driveSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO −25 V Collector to emitter voltage VCEO −25 V ...
FP1 SERIES: Features: • Up to 0.7 A current drive available• On-chip bias resistor• Low power consumption during driveSpecifications Parameter Symbol Ratings Unit Collector to...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
−25 |
V |
Collector to emitter voltage |
VCEO |
−25 |
V |
Emitter to base voltage |
VEBO |
−10 |
V |
Collector current (DC) |
IC(DC) |
−0.7 |
A |
Collector current (Pulse) |
IC(pulse) * |
−1.0 |
A |
Base current (DC) |
IB(DC) |
−20 |
mA |
Total power dissipation |
PT |
200 |
mW |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
−55 to +150 |
°C |
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the FP1 SERIES and its recommended applications.