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Part Number: FP4050
Description: The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic Hig...
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FP4050
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DataSheet
General Description
FP4050 General Description
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and ISM band spread spectrum applications.
FP4050 Maximum Ratings
|
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
|
Output Power @ 1 dB Compression |
P1dB |
f = 2 GHz; VDS = 8V; IDS = 50% IDSS |
34 |
dBm | ||
|
Power Gain @ 1 dB Compression |
G1dB |
f = 2 GHz; VDS = 8V; IDS = 50% IDSS |
14 |
dB | ||
|
Saturated Drain-Source Current |
IDSS |
VDS = 2V; VGS = 0V |
950 |
1100 |
1300 |
mA |
|
Maximum Drain-Source Current |
IMAX |
VDS = 2V; VGS = 1V |
2200 |
mA | ||
|
Transconductance |
GM |
VDS = 2 V; VGS = 0 V |
880 |
mS | ||
|
Pinch-Off Voltage |
VP |
VDS = 2 V; IDS = 10 mA |
-1.2 |
V | ||
|
Gate-Drain Breakdown Voltage Magnitude |
VBDGD |
IGS = 20 mA |
12 |
15 |
V | |
|
Gate-Source Breakdown Voltage Magnitude |
VBDGS |
IGS = 20 mA |
12 |
15 |
V | |
|
Gate-Source Leakage Current Magnitude |
IGSL |
VGS = -5 V |
0.2 |
mA | ||
|
Thermal Resistivity |
QJC |
15 |
°C/W |
FP4050 Features
·48 dBm IP3 at 2 GHz
·34 dBm P-1dB at 2 GHz
·14 dB Power Gain at 2 GHz
·34 dBm P-1dB at 2 GHz
·14 dB Power Gain at 2 GHz
FP4050
PDF/DataSheet Download
- Datasheet: FP4050
- File Size: 40524 KB
- Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
- Click here to Download
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