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FPD6836

Features: 25.5 dBm Linear Output Power at 12 GHz10 dB Power Gain at 12 GHz16.5 dB Maximum Stable Gain at 12 GHz12 dB Maximum Stable Gain at 24 GHz50% Power-Added Efficiency8V OperationSpecifications Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS -3V < V...

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SeekIC No. : 004343035 Detail

FPD6836: Features: 25.5 dBm Linear Output Power at 12 GHz10 dB Power Gain at 12 GHz16.5 dB Maximum Stable Gain at 12 GHz12 dB Maximum Stable Gain at 24 GHz50% Power-Added Efficiency8V OperationSpecifications...

FPD6836 Data Sheet

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Part Number:
FPD6836
Supply Ability:
5000

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Product Details

Description



Features:

 25.5 dBm Linear Output Power at 12 GHz
 10 dB Power Gain at 12 GHz
 16.5 dB Maximum Stable Gain at 12 GHz
 12 dB Maximum Stable Gain at 24 GHz
 50% Power-Added Efficiency
 8V Operation


Specifications

Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS -3V < VGS < +0V   8 V
Gate-Source Voltage VGS 0V < VDS < +8V   -3 V
Drain-Source Current IDS For VDS > 2V   IDSS mA
Gate Current IG Forward or reverse current   15 mA
RF Input Power2 PIN Under any acceptable bias state   170 mW
Channel Operating Temperature TCH Under any acceptable bias state   175 ºC
Storage Temperature TSTG Non-Operating Storage -40 150 ºC
Total Power Dissipation PTOT See De-Rating Note below   1.2 W
Gain Compression Comp. Under any bias conditions   5 dB
Simultaneous Combination of Limits3   2 or more Max. Limits   80 %

1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: PTOT (PDC + PIN) POUT, where
                                                   PDC: DC Bias Power
                                                   PIN: RF Input Power
                                                   POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   PTOT= 1.2W (0.008W/°C) x THS
where THS = heatsink or ambient temperature.
Example: For a 85°C heatsink temperature: PTOT = 1.2W (0.008 x (85 22)) = 0.69W


Description

The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),featuring a 0.25 m by 360 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable mediumpower applications. The FPD6836 also features Si3N4 passivation and is available in a low cost plastic package.

FPD6836 applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.




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