FPD750

Features:

27 dBm Linear Output Power at 12 GHz
11.5 dB Power Gain at 12 GHz
14.5 dB Maximum Stable Gain at 12 GHz
38 dBm Output IP3
50% Power-Added Efficiency




Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	-3V < VGS < +0V		8	V
Gate-Source Voltage	VGS	0V < VDS < +8V		-3	V
Drain-Source Current	IDS	For VDS > 2V		IDSS	mA
Gate Current	IG	Forward or reverse current		7.5	mA
RF Input Power2	PIN	Under any acceptable bias state		175	mW
Channel Operating Temperature	TCH	Under any acceptable bias state		175	ºC
Storage Temperature	TSTG	Non-Operating Storage	-40	150	ºC
Total Power Dissipation	PTOT	See De-Rating Note below		2.3	W
Gain Compression	Comp.	Under any bias conditions		5	dB
Simultaneous Combination of Limits3		2 or more Max. Limits		80	%

^{*T_Ambient = 22°C unless otherwise noted **Users should avoid exceeding 80% of 2 or more Limits simultaneously}Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
P_DC: DC Bias Power
P_IN: RF Input Power
P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
P_TOT= 2.3W (0.015W/°C) x T_HS
where THS = heatsink or ambient temperature.
Example: For a 85°C heatsink temperature: P_TOT = 2.3W (0.015 x (85 22)) = 1.4W

Series

FPD

Frequency (MHz)

1000 to 20,000

Gain (dB)

11.5

OP1dB (dBm)

27.5

OIP3 (dBm)

38

Eff (%)

50

Vcc (V)

8

Id (mA)

230

Package/Size (Dim in mm)

0.47 x 0.34

Description

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),featuring a 0.25 m by 750 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 and SOT343 plastic packages.

FPD750 applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.