Position: Home  > All Categories> Integrated Circuits (ICs) > FQA11N90C_F109

FQA11N90C_F109

MOSFET 900V N-Ch Q-FET advance C-Series

product image

FQA11N90C_F109 Picture
See larger image
SeekIC No. : 00146143 Detail

FQA11N90C_F109: MOSFET 900V N-Ch Q-FET advance C-Series

FQA11N90C_F109 Data Sheet

floor Price/Ceiling Price

US $ 1.22~1.66 / Piece | Get Latest Price
Part Number:
FQA11N90C_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.66
  • $1.49
  • $1.36
  • $1.22
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 11 A
Package / Case : TO-3PN


Parameters:

Technical/Catalog InformationFQA11N90C_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 3290pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA11N90C_F109
FQA11N90C_F109



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
RF and RFID
X3C26P1-30S
1P620S
Isolators
HCPL062N
HCPL316J
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more