Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 15 A
Resistance Drain-Source RDS (on)
: 0.48 Ohms
Package / Case
: TO-3PN
Features: * 15A, 500V, RDS(on) = 0.48 @VGS = 10 V
* Low gate charge (typical 43 nC)
* Low Crss (typical 20pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Fast recovery body diode (typical 100ns)Specifications
|
Symbol |
Parameter |
FQA13N50CF |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
15 |
A |
|
9.5 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
60 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
860 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
15 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
21.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
218 |
W |
|
1.56 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA13N50CF field effect transis- tors are produced using Fairchild's proprietary,planar stripe,DMOS technology.
This advanced technology FQA13N50CF has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. FQA13N50CF is well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQA13N50CF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2055pF @ 25V |
| Power - Max | 218W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 56nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA13N50CF
FQA13N50CF
|
FQA13N50CF Data Sheet
