FQA16N25

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 18.5 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.23 Ohms


Features:

* 18.5A, 250V, R_DS(on)  = 0.23  @V_GS  = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical  23 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FQA16N25	Units
VDSS	Drain-Source Voltage	250	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	18.5	A
		11.7	A
IDM	Drain Current - Pulsed             (Note 1)	74	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	560	mJ
IAR	Avalanche Current                   (Note 1)	18.5	A
EAR	Repetitive Avalanche Energy         (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	190	W
		1.52	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These P-Channel enhancement mode power FQA16N25 field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

    This advanced technology FQA16N25 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA16N25 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.