FQA17P10

MOSFET 100V P-Channel QFET

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SeekIC No. : 00160945 Detail

FQA17P10: MOSFET 100V P-Channel QFET

floor Price/Ceiling Price

Part Number:
FQA17P10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Continuous Drain Current : 18 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : - 100 V


Features:

* -18A, -100V,DS(on) = 0.19  @VGS  = -10 V
* Low gate charge ( typical 30 nC)
* Low Crss ( typical  100 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
 


Specifications

Symbol
Parameter
FQA17P10
Units
VDSS
Drain-Source Voltage
-100
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
-18
A
-12.7
A
IDM
Drain Current - Pulsed             (Note 1)
-72
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
580
mJ
IAR
Avalanche Current                   (Note 1)
-18
A
EAR
Repetitive Avalanche Energy         (Note 1)
2412
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
-6.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
120
W
0.8
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These P-Channel enhancement mode power FQA17P10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
    This advanced technology FQA17P10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA17P10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQA17P10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs190 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA17P10
FQA17P10



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