FQA28N50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.16 Ohms
Continuous Drain Current : 28.4 A


Features:

* 28.4A, 500V, R_DS(on)  = 0.16  @V_GS  = 10 V
* Low gate charge ( typical 110 nC)
* Low Crss ( typical  60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FQA28N50	Units
VDSS	Drain-Source Voltage	500	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	28.4	A
		18	A
IDM	Drain Current - Pulsed             (Note 1)	113.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	1300	mJ
IAR	Avalanche Current                   (Note 1)	28.4	A
EAR	Repetitive Avalanche Energy         (Note 1)	31	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	310	W
		2.5	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA28N50 field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

    This advanced technology FQA28N50 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA28N50 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.


Parameters:

Technical/Catalog Information	FQA28N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	28.4A
Rds On (Max) @ Id, Vgs	160 mOhm @ 14.2A, 10V
Input Capacitance (Ciss) @ Vds	5600pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA28N50 FQA28N50