FQA22N30

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 22 A
Package / Case : TO-3P
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.16 Ohms


Features:

* 22A, 300V, R_DS(on) = 0.16 @V_GS  = 10 V
* Low gate charge ( typical  47 nC)
* Low Crss ( typical  40 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability  


Specifications

Symbol	Parameter	FQA22N30	Units
VDSS	Drain-Source Voltage	300	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	22	A
		13.9	A
IDM	Drain Current - Pulsed             (Note 1)	88	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	1000	mJ
IAR	Avalanche Current                   (Note 1)	22	A
EAR	Repetitive Avalanche Energy         (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	190	W
		1.52	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA22N30 field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
    This advanced technology FQA22N30 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA22N30 is well suited for high efficiency switching DC/DC converters and switch mode power supplies.