FQA46N15

MOSFET 150V N-Channel QFET

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SeekIC No. : 00149403 Detail

FQA46N15: MOSFET 150V N-Channel QFET

floor Price/Ceiling Price

US $ .98~1.38 / Piece | Get Latest Price
Part Number:
FQA46N15
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.38
  • $1.24
  • $1.11
  • $.98
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.042 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.042 Ohms


Features:

* 50A, 150V, R DS(on) = 0.042  @VGS  = 10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical  100 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
 


Specifications

Symbol
Parameter
 FQA46N15
Units
VDSS
Drain-Source Voltage
150
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
50
A
35.3
A
IDM
Drain Current - Pulsed             (Note 1)
200
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
650
mJ
IAR
Avalanche Current                   (Note 1)
50
A
EAR
Repetitive Avalanche Energy         (Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
6.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
250
W
1.67
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQA46N15 field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA46N15 is well suited for lo voltage applications such as audio amplifire,high efficiency switching for DC/DC conventers,and DC motor control,uninterrupted power supply.




Parameters:

Technical/Catalog InformationFQA46N15
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs42 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3250pF @ 25V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA46N15
FQA46N15



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