FQA6N80

MOSFET 800V N-Channel QFET

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SeekIC No. : 00160881 Detail

FQA6N80: MOSFET 800V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQA6N80
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.3 A
Resistance Drain-Source RDS (on) : 1.95 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1.95 Ohms


Features:

* 6.3A, 800V, RDS(on)  =  1.95  @VGS  = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical  14 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
 


Specifications

Symbol
Parameter
FQA10N80
Units
VDSS
Drain-Source Voltage
800
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
6.3
A
4.0
A
IDM
Drain Current - Pulsed             (Note 1)
25.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
680
mJ
IAR
Avalanche Current                   (Note 1)
6.3
A
EAR
Repetitive Avalanche Energy         (Note 1)
18.5
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
4.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
185
W
1.47
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

   These N-Channel enhancement mode power FQA6N80 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQA6N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA6N80 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.


Parameters:

Technical/Catalog InformationFQA6N80
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C6.3A
Rds On (Max) @ Id, Vgs1.95 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max185W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA6N80
FQA6N80



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