FQA8N100C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Package / Case : TO-3PN
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 1.45 Ohms


Features:

· 8A, 1000V, RDS(on) = 1.45Ω @VGS = 10 V
· Low gate charge (typical 53 nC)
· Low Crss (typical  16 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability


Specifications

Symbol	Parameter	FQA8N100C	Units
VDSS	Drain-Source Voltage	1000	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	8	A
		5	A
IDM	Drain Current - Pulsed (Note 1)	32	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	850	mJ
IAR	Avalanche Current (Note 1)	8	A
EAR	Repetitive Avalanche Energy (Note 1)	22.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	225	W
		1.79	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQA8N100C field effect transis- tors  are  produced  using  Fairchild's  proprietary,  planar  stripe, DMOS technology.

This advanced technology FQA8N100C has been especially tailored to mini- mize  on-state  resistance,  provide  superior  switching  perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. FQA8N100C is well suited for high effi- cient switched mode power supplies.

Parameters:

Technical/Catalog Information	FQA8N100C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1.45 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	3220pF @ 25V
Power - Max	225W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA8N100C FQA8N100C