FQA85N06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

* 100A, 60V, R_DS(on)  = 0.010 @V_GS  = 10 V
* Low gate charge ( typical 86 nC)
* Low Crss ( typical  165 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQA85N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current- Continuous (TC = 25°C) - Continuous (TC = 100°C)	100	A
		71	A
IDM	Drain Current - Pulsed(Note 1)	350	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy(Note 2)	815	mJ
IAR	Avalanche Current(Note 1)	100	A
EAR	Repetitive Avalanche Energy(Note 1)	21.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	214	W
		1.43	W/C
TJ,TSTG	Operating and Storage Temperature Range	-55 to+175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA85N06 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQA85N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA85N06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parameters:

Technical/Catalog Information	FQA85N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	10 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	4120pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	112nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA85N06 FQA85N06