FQAF11N90

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-3PF
Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 0.96 Ohms


Features:

• 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQAF11N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	7.2	A
		4.55	A
IDM	Drain Current - Pulsed (Note 1)	28.8	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1000	mJ
IAR	Avalanche Current (Note 1)	7.2	A
EAR	Repetitive Avalanche Energy (Note 1)	12	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	120	W
		0.96	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQAF11N90 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQAF11N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF11N90 is well suited for high efficiency switch mode power supply.

Parameters:

Technical/Catalog Information	FQAF11N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	7.2A
Rds On (Max) @ Id, Vgs	960 mOhm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	94nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF11N90 FQAF11N90