Features: * 49A, 60V, RDS(on) = 0.016 @VGS = 10 V * Low gate charge ( typical 48 nC)* Low Crss ( typical 100 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capability* 175°C maximum junction temperature ratingSpecifications Symbol Parameter FQAF65N06 Units VDSS Drain...
FQAF65N0: Features: * 49A, 60V, RDS(on) = 0.016 @VGS = 10 V * Low gate charge ( typical 48 nC)* Low Crss ( typical 100 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capability* 175°C maximum junc...
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| Symbol | Parameter |
FQAF65N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
100 |
A |
|
71 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
350 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
815 |
mJ |
| IAR | Avalanche Current (Note 1) |
100 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
21.4 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
214 |
W |
|
1.43 |
W/C | ||
| TJ,TSTG | Operating and Storage Temperature Range |
-55 to+175 |
|
| TL | Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power FQAF65N0 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQAF65N0 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF65N0 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.