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FQAF6N80

MOSFET 800V N-Channel QFET

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SeekIC No. : 00163371 Detail

FQAF6N80: MOSFET 800V N-Channel QFET

FQAF6N80 Data Sheet

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Part Number:
FQAF6N80
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 1.95 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4.4 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 1.95 Ohms


Features:

• 4.4A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQAF6N80
Units
VDSS Drain-Source Voltage
800
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
4.4
A
2.78
A
IDM Drain Current - Pulsed (Note 1)
17.6
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
680
mJ
IAR Avalanche Current (Note 1)
4.4
A
EAR Repetitive Avalanche Energy (Note 1)
9.0
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
90
W
0.72
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Parameters:

Technical/Catalog InformationFQAF6N80
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C4.4A
Rds On (Max) @ Id, Vgs1.95 Ohm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQAF6N80
FQAF6N80



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