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FQAF6N90

MOSFET 900V N-Channel QFET

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SeekIC No. : 00162185 Detail

FQAF6N90: MOSFET 900V N-Channel QFET

FQAF6N90 Data Sheet

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Part Number:
FQAF6N90
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 1.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4.5 A
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 1.9 Ohms


Parameters:

Technical/Catalog InformationFQAF6N90
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs1.9 Ohm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds 1880pF @ 25V
Power - Max96W
PackagingTube
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQAF6N90
FQAF6N90



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