FQAF9N90

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 1.3 Ohms
Continuous Drain Current : 5.9 A


Features:

• 5.9A, 900V, RDS(on) = 1.3Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQAF9N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	5.9	A
		3.73	A
IDM	Drain Current - Pulsed (Note 1)	23.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	900	mJ
IAR	Avalanche Current (Note 1)	5.9	A
EAR	Repetitive Avalanche Energy (Note 1)	11.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	113	W
		0.91	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQAF9N90 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQAF9N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF9N90 is well suited for high efficiency switch mode power supplies.