Position: Home  > All Categories> Integrated Circuits (ICs) > FQB30N06L

FQB30N06L

Features: • 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 50 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol P...

product image

FQB30N06L Picture
See larger image
SeekIC No. : 004343107 Detail

FQB30N06L: Features: • 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 50 pF)• Fast switching• 100% avalanche tested• Impr...

FQB30N06L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB30N06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB30N06L / FQI30N06L
Units
VDSS Drain-Source Voltage
60
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
32
A
22.6
A
IDM Drain Current - Pulsed (Note 1)
128
A
VGSS Gate-Source Voltage
±20
V
EAS Single Pulsed Avalanche Energy (Note 2)
350
mJ
IAR Avalanche Current (Note 1)
32
A
EAR Repetitive Avalanche Energy (Note 1)
7.9
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
7.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
79
W
0.53
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB30N06L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB30N06L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB30N06L is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Filters
PICO2205A
PICO2204A
View more