FQB33N10TM, US $ .47-.67 , Fairchild Semiconductor, FQB33N10TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148685 Detail

FQB33N10TM: MOSFET 100V N-Channel QFET

FQB33N10TM Data Sheet

US $ .47~.67 / Piece | Get Latest Price

Part Number:: FQB33N10TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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What is this?

FQB30N06 evaluate
Features: • 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V• Low gate charge ( typical 19 ...
FQB30N06L evaluate
Features: • 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V• Low gate charge ( typical 15...
FQB30N06LTM evaluate
US $.47 - .76 / Piece

MOSFET 60V N-Channel QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	33 A
Resistance Drain-Source RDS (on) :	0.052 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.052 Ohms

Parameters:

Technical/Catalog Information	FQB33N10TM
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	52 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	3.75W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	51nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB33N10TM FQB33N10TM FQB33N10TMCT ND FQB33N10TMCTND FQB33N10TMCT

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FQB33N10TM

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