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FQB3P20TM

MOSFET 200V P-Channel QFET

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SeekIC No. : 00160068 Detail

FQB3P20TM: MOSFET 200V P-Channel QFET

FQB3P20TM Data Sheet

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Part Number:
FQB3P20TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 2.8 A
Resistance Drain-Source RDS (on) : 2.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 2.7 Ohms
Drain-Source Breakdown Voltage : - 200 V
Continuous Drain Current : - 2.8 A


Parameters:

Technical/Catalog InformationFQB3P20TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C2.8A
Rds On (Max) @ Id, Vgs2.7 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max3.13W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB3P20TM
FQB3P20TM



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