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FQB5N20LTM: MOSFET 200V N-Ch QFET Logic Level

FQB5N20LTM Data Sheet

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Part Number:: FQB5N20LTM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Negotiable

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Upload time: 2024/4/18

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US $.61 - 1 / Piece

MOSFET 60V N-Channel QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	4.5 A
Resistance Drain-Source RDS (on) :	0.94 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.94 Ohms

Parameters:

Technical/Catalog Information	FQB5N20LTM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 2.25A, 10V
Input Capacitance (Ciss) @ Vds	325pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.2nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB5N20LTM FQB5N20LTM

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