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MFG:FAIRC  Package Cooled:TO-263(D2PAK)  D/C:09+  

FQB8P10 Product Image

FQB Series Datasheet download

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Part Number: FQB8P10

 

MFG: FAIRC

Package Cooled: TO-263(D2PAK)

D/C: 09+

Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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FQB8P10 General Description


These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQB8P10 Maximum Ratings

Symbol Parameter
FQB8P10 / FQI8P10
Units
VDSS Drain-Source Voltage
-100
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-8.0
A
-5.7
A
IDM Drain Current - Pulsed (Note 1)
-32
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
150
mJ
IAR Avalanche Current (Note 1)
-8.0
A
EAR Repetitive Avalanche Energy (Note 1)
6.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-56.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
65
W
0.43
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

FQB8P10 Features

• -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQB8P10 datasheet

FQB8P10
PDF/DataSheet Download

  • Datasheet: FQB8P10
  • File Size: 683182 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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