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Part Number: FQD11P06

 

 

 

 

Description: These P-Channel enhancement mode power field effect transistors are produced using ...


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FQD11P06 General Description


    These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQD11P06 Maximum Ratings

Symbol Parameter FQD11P06 /FQU11P06 Units
VDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -9.4 A
-5.95 A
IDM Drain Current - Pulsed (Note 1) -37.6 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) -9.4 A
EAR Repetitive Avalanche Energy (Note 1) 3.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 38 W
0.3 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  

FQD11P06 Features

• -9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical  45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQD11P06 datasheet

FQD11P06
PDF/DataSheet Download

  • Datasheet: FQD11P06
  • File Size: 630731 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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