Features: • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V• Low gate charge ( typical 11.5 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 150 maximum junction temperature ratingSpecifications Symbol ...
FQD20N06: Features: • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V• Low gate charge ( typical 11.5 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• ...
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Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical ...
| Symbol | Parameter | FQD20N06 /FQU20N06 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
16.8 | A |
| 10.6 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 67.2 | A |
| VGSS | Gate-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 155 | mJ |
| IAR | Avalanche Current (Note 1) | 16.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
38 | W | |
| 0.30 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
These N-Channel enhancement mode power FQD20N06 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQD20N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD20N06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.